PART |
Description |
Maker |
ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD RELAY SSR 110A 240VAC AC INPUT 3.3V In-System Programmable SuperFASTHigh Density PLD
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LATTICE[Lattice Semiconductor] LatticeSemiconductor Lattice Semiconductor Corporation
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SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
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ISPLSI2192VL-100LB144 ISPLSI2192VL-100LT128 ISPLSI |
2.5V In-System Programmable SuperFAST High Density PLD TRIAC STANDARD 12A 400V TO-220AB 2.5V In-System Programmable SuperFASTHigh Density PLD
|
Lattice Semiconductor Corporation
|
81080V ISPLSI81080V-60LB272 ISPLSI81080V-90LB492 I |
3.3V In-System Programmable SuperBIG High Density PLD 3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 14.5 ns, PBGA492 3.3V In-System Programmable SuperBIGHigh Density PLD 3.3在系统可编程SuperBIG⑩高密度可编程逻辑器件
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
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1032-60LG_883 1032-60LJ 1032-60LJI 1032-60LT 1032- |
High-Density Programmable Logic In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD In-System Programmable 3.3V SuperWIDE⑩ High Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD 110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84 High-Density Programmable Logic
|
Lattice Semiconductor, Corp. LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation
|
ISPLSI5256VA ISPLSI5256VA-70LB208 ISPLSI5256VA-70L |
In-System Programmable 3.3V SuperWIDE?/a> High Density PLD In-System Programmable 3.3V SuperWIDE??High Density PLD In-System Programmable 3.3V SuperWIDEHigh Density PLD
|
Lattice Semiconductor Corporation
|